| PART |
Description |
Maker |
| MJE15032 MJE15033 ON2013 |
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
From old datasheet system
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
| MJ15015 MJ15016 MJ2955A ON0037 2N3055 2N3055A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 120 VOLTS 115 / 180 WATTS
From old datasheet system
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 120 VOLTS 115 180 WATTS
Complementary Slllcon
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| 2N6488 2N6487 2N6490 5237 |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MJ2955 2N3055 4079 |
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
SILICON NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
