| PART |
Description |
Maker |
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-24F |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
| HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology
FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676
100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456
300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456
Spartan-IIE FPGA
Product Availability
|
XILINX INC
Xilinx, Inc.
|
