| PART |
Description |
Maker |
| CJP07N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP02N60 |
Power Filed Effect Transistor
|
江苏长电科技股份有限公司
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| IPA65R190CFD IPW65R190CFD IPI65R190CFD IPP64R190CF |
Metal Oxide Semiconduvtor Field Effect Transistor
650V CoolMOS C6 CFD POWER Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| CMT14N50GN220F CMT14N5009 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| CMT02N60GN220 CMT02N60GN220FP CMT02N60GN251 CMT02N |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTV32N25E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MTV20N50E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MRF6522-70 MRF6522-70R306 MRF6522-70R3 |
RF Power Field Effect Transistor
|
http://
Freescale Semiconductor, Inc
|
| MTM25N10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
