| PART |
Description |
Maker |
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| RF5117PCBA-41X RF511706 RF5117 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| PE3293 |
1.8GHz/550MHz Dual Fractional-N Ultra-Low Spurious PLL for Frequency Synthesis 1.8GHz/550MHz双分数N超低的杂散锁相环频率合成
|
Electronic Theatre Controls, Inc.
ETC
|
| SZP-3026Z |
2.7-3.8GHz 2W InGaP Amplifier
|
List of Unclassifed Manufacturers
ETC
|
| KSB1116S KSB1116SYBU KSB1116SYTA KSB1116SYTANL |
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier Medium Speed Switching
From old datasheet system
Audio Frequency Power Amplifier Medium Speed Switching
|
FAIRCHILD[Fairchild Semiconductor]
|
| UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| NBB-X-K1 NBB-400 NBB-400_07 NBB-400-D NBB-400-E NB |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz
|
http://
RFMD[RF Micro Devices]
|
| MF-MSMD MF-MSMD075 |
19 - 38 GHz Medium Power Amplifier
Ka-Band Packaged 1 W Power Amplifier
|
Bourns Inc.
|
| MAX2645EUB MAX2645 |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver
|
MAXIM[Maxim Integrated Products]
|
