PART |
Description |
Maker |
CGH25120F CGH25120F-TB CGH25120F-AMP |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
|
Cree, Inc
|
CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor 30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
CK-L02802G801 |
2700 MHz - 2900 MHz RF/MICROWAVE 3 PORT CIRCULATOR
|
FDK CORP
|
NA-1690 |
BLS7G2729L-350P at 2700-2900 MHz
|
NXP Semiconductors
|
2729-300P |
300 Watts - 100μs, 10%, 36V S-Band Pulsed Radar 2700 - 2900 MHz
|
Microsemi Corporation
|
KP4-19A |
1900 MHz - 2300 MHz PARABOLIC ANTENNA, 25.6 dBi GAIN
|
ANDREW CORP
|
XMADC-100-6D |
800 MHz - 2300 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.2 dB INSERTION LOSS-MAX
|
XMA CORP
|
|