| PART |
Description |
Maker |
| MZA3216Y241B MZA3216Y102B MZA3216D301C MZA3216R301 |
Chip Beads(SMD Array) For General Signal Line MZA Series MZA3216 Type
|
TDK Electronics
|
| B72500DXXXX |
CeraDiode Reliable ESD protection of single lines
|
EPCOS
|
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| 02-0104-0400 02-0140-0200 |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| CEPH14906 CEPH149NP-1R0MC CEPH149NP-2R4MC CEPH149N |
CEPH149 1 ELEMENT, 2.4 uH, MANGANESE-ZINC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductor SMD Type : CEPH Series
Power Inductor< SMD Type : CEPH Series>
Power Inductor< SMD Type : CEPH Series
|
Sumida, Corp.
Sumida Corporation
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364005BSWG KMM5364005BSW |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5364003BSW KMM5364003BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT4C4004J |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
