| PART |
Description |
Maker |
| EB7S EB71SA10SGFXA EB71SA10SGXA EB71SA12SGFXA EB71 |
Single Readout, Selective Gold Plating, Polarization Between Contact Positions, Polarizing Key is Reinforced Nylon, Protected Entry
Edgeboard Connectors, Single Readout
|
VISAY[Vishay Siliconix]
|
| MC14562B MC14562BCL MC14562BD ON0934 MC14562BCP |
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, CDIP14
128-Bit Static Shift Register 128位静态移位寄存器
128-Bit Static Shift Register 4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14
ORDERING INFORMATION
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| AM29LV642DU90RPAI AM29LV642DU12RPAE AM29LV642DU12R |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PC Board Fuse; Current Rating:400mA-10A; Voltage Rating:250V; Fuse Terminals:Radial Lead; Fuse Size/Group:Subminiature; Fuse Type:Fast Acting; Interrupting Current Max:50A; Packaging:Bulk
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HM538123BJ-10 HM538123BJ-6 HM538123BJ-8 |
100ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
60ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
80ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
|
Hitachi Semiconductor
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| CY7C342B-35JC |
128-Macrocell MAX® EPLD
|
CYPRESS
|
| RIVA128 5354 STG3000X |
128-BIT 3D MULTIMEDIA ACCELERATOR
RIVA 128⑩ 128-BIT 3D MULTIMEDIA ACCELERATOR
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| ICX434DQN |
Diagonal 5.68mm(Type 1/3.2) Frame Readout CCD
Diagonal 5.68mm (Type 1/3.2) Frame Readout CCD Image Sensor with Square Pixel for Color Cameras
|
SONY[Sony Corporation]
|
| ICX432DQF |
Diagonal 6.67mm(Type 1/2.7) Frame Readout CCD
Diagonal 6.67mm (Type 1/2.7) Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras
|
SONY[Sony Corporation]
|
