| PART |
Description |
Maker |
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL55A BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL64B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
SemeLAB
|
| PM5543 |
SONET/ SDH 155Mbi t/s ADM Refer ence Desi gn
|
PMC-Serria
|
| DS1500-3 |
1500 Watts 12V Distributed Power System
AC-DC / Distributed Power Front-End 2U
|
Emerson Network Power
ASTEC[Astec America, Inc]
|
| XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
| 2316226 |
End cover for FB-PS-BASE/EX base. Use in power and indicator bus at each end base.
|
PHOENIX CONTACT
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
