| PART |
Description |
Maker |
| BH2228FV |
8bit 6ch D/A converter
|
ROHM[Rohm]
|
| BH2227FV |
8bit 4ch D/A converter
|
ROHM[Rohm]
|
| BU2500FV BU2501FV |
8bit 12-channel D/A converter 82通道D / A转换
|
Rohm Co., Ltd.
|
| M62398P |
8BIT 12CH I2C BUS DA CONVERTER WITH BUFFER AMPLIFIERS
|
Mitsubishi Electric Corporation
|
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AK9824 AK9824M AK9822 AK9822M |
2ch 8bit DA 4Kbit EEPROM
2ch 8bit DA 2Kbit EEPROM
2K / 4Kbit EEPROM with 2ch 8bit D/A Converter
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 160V; Case Size: 35x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1800uF; Voltage: 160V; Case Size: 30x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 160V; Case Size: 20x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1800uF; Voltage: 160V; Case Size: 35x35 mm; Packaging: Bulk 2K / 4Kbit通道8位的EEPROM / A转换
|
http://
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MN101E11G |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
