| PART |
Description |
Maker |
| MC33076DR2 MC330761 MC33076P1 MC33076-D |
Dual High Output Current, Low Power, Low Noise Bipolar Operational Amplifier
|
ON Semiconductor
|
| BFY50L |
Bipolar NPN Device in a Hermetically sealed TO5
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
|
Seme LAB
|
| MC33079DT |
LOW NOISE QUAD BIPOLAR OP-AMPS
|
ST
|
| BFR92P-13 |
Low Noise Silicon Bipolar RF Transistor
|
Infineon Technologies A...
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BFP640ESD |
Robust High Performance Low Noise Bipolar RF Transistor
|
Infineon Technologies AG
|
| BFP840FESD |
Robust Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| AT-41411 AT-41411-BLK AT-41411-TR1 AT-41411-B AT-4 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
