| PART |
Description |
Maker |
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF1211 BF1211WR BF1211R BF1211-15 BF1211-2015 |
BF1211; BF1211R; BF1211WR; N-channel dual-gate MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
ETC
|
| BF1100R BF1100 BF1100_1 BF1100-15 BF1100-2015 |
Dual-gate MOS-FETs
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| BF904A BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
|
| 3SK274 |
RF Dual Gate FETs
|
TOSHIBA
|
| IXTZXXNXX IXTHXXNXX |
(IXTMxxxx) MOS FETs
(IXTHxxxx) MOS FETs
|
IXYS
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
