| PART |
Description |
Maker |
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| BB601M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| BB505M BB505MES |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB305M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB303M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| BB501C BB501 BB5.1 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB506MFS-TL-E BB506M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB506C BB506CFS |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
