PART |
Description |
Maker |
MA2J728 MA728 |
Schottky Barrier Diodes (SBD) Silicon Epitaxial Planar Type Schottky Barrier Diodes From old datasheet system
|
Matsshita / Panasonic Mitsubishi
|
MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA6Z718 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology ETC
|
CDBQR00340-HF12 CDBQR00340-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.03A SMD Schottky Barrier Diode
|
Comchip Technology
|
CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|
1PS70SB40 BAS40SERIES5 1PS75SB45 1PS75SB452 1PS70S |
Schottky barrier double diodes General-purpose Schottky diodes
|
NXP Semiconductors
|
BAS40-04W BAS40-05W BAS40-06W BAS40W BAS40W_3 |
Schottky barrier double diodes From old datasheet system Schottky barrier (double) diodes
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BAT754 BAT754A BAT754C BAT754S BAT754_SERIES_1 BAT |
From old datasheet system Schottky barrier double diodes Schottky barrier (double) diodes
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|