| PART |
Description |
Maker |
| AT61162E05 AT61162E-PM40M-E AT61162E-PM40MMN |
Rad Hard 2-Mbit x 8 SRAM Cube
|
ATMEL Corporation
|
| AT68166FT |
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Mult
|
ATMEL Corporation
|
| IRHF7330SE |
N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々
|
International Rectifier
|
| 930105201 5962-0520801QXC 5962-0520801QYC 5962-052 |
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
| 930105202 AT83C21GCXXX-PURUL AT7908E AT7908EJL-E A |
Rad Hard 512K x 8 Very Low Power CMOS SRAM
GemCore Serial Lite PRO
CAN Controller for Space Application
|
ATMEL Corporation
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| BWR12/335D5 BWR15/330D48 |
Rad-hard dual 4-input AND gate
Rad-hard quad 2-input OR gate 模拟IC
|
TE Connectivity, Ltd.
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| PE9601EK 9601-00 9601-01 9601-11 PE9601 |
2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOS?/a> Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOSInteger-N PLL for Rad Hard Applications
2200 MHz UltraCMOS⑩ Integer-N PLL for Rad Hard Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
