PART |
Description |
Maker |
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
TD62504FB TD62503FB E005669 |
From old datasheet system 7CH SINGLE DRIVER :COMMON EMITTER 7CH SINGLE DRIVER : COMMON EMITTER 7通道单一驱动程序:共发射
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
MRF517 |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
|
Microsemi, Corp.
|
MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
UMA6N EMA6 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD. ROHM[Rohm]
|
TD6259307 TD62598AFNG TD62594AFNG TD62593AFNG TD62 |
8CH SINGLE DRIVER : COMMON EMITTER
|
Toshiba Semiconductor
|
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor
|
GHz Technology
|
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|