| PART |
Description |
Maker |
| GLT41016-10E |
64k x 16 embedded EDO DRAM
|
G-LINK Technology
|
| MT42C4064 |
64k*4 dram with 256*4 sam
|
MT
|
| UT51C161 UT51C161JC-35 UT51C161JC-40 UT51C161JC-50 |
64K WORD X 16 BIT EDO DRAM
|
UTRON Technology
|
| M10B11664A-45T M10B11664A M10B11664A-25J M10B11664 |
64K X 16 DRAM FAST PAGE MODE 64K的16的DRAM快速页面模
N/A
|
Electronic Theatre Controls, Inc.
N/A
Elite Memory Technology, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| M5M411665ATP2-7T |
64K X 16 EDO DRAM, 70 ns, PDSO40 0.400 INCH, PLASTIC, TSOP2-44/40
|
Integrated Silicon Solution, Inc.
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| V53C466Z V53C466J |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| CY7C1021CV26-15ZE CY7C1021CV26 CY7C1021CV26-15ZET |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
1-Mbit (64K x 16) Static RAM
|
CYPRESS SEMICONDUCTOR CORP
CYPRESS[Cypress Semiconductor]
|
