| PART |
Description |
Maker |
| APT5027 APT5027BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 500V 20A 0.270 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
| RJH1CD5DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| SPU03N60S5 |
Cool MOS Power-Transistor(Cool MOS 功率晶体 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| GB10RF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
|
International Rectifier
|
