| PART |
Description |
Maker |
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| AOT25S65 |
600V 20A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOB20S60 AOT20S60 AOTF20S60 AOB20S60L |
600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| RJH1CM6DPQ-E013 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| NCE20G120T |
1200V, 20A, Trench NPT IGBT
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| FGA20S120M |
1200V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
P Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| SPA5551 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
|
International Rectifier
|
