| PART |
Description |
Maker |
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| APT5020SVFR APT5020 |
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
|
| IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A)
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| CRNA25-1200 CRNA25-1200PT CRNA25-800PT CRNA25-400 |
25Amp - 400/600/800/1200V - RECTIFIER
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FRK9150H FRK9150R FRK9150D FN3266 |
26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RJK4007DPP-M0 RJK4007DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
7.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
|
Renesas Electronics Corporation
|
| STY30NK90Z |
N-CHANNEL 900V - 0.25 OHM - 26A MAX247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
N-CHANNEL 900V - 0.21ohm - 26A Max247 Zener-Protected SuperMESH MOSFET
|
ST Microelectronics
|
| IRFP26N60LPBF |
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mヘ , Trr typ. = 170ns , ID = 26A )
|
International Rectifier
|
