| PART |
Description |
Maker |
| AIF50B300 AIF120F300 AIF AIF80A300 AIF25H300 AIF12 |
Embedded Power for Business-Critical Continuity
600W Continuous power at 100°C baseplate temperature
600W Continuous power at 100∑C baseplate temperature
1-OUTPUT 600 W DC-DC REG PWR SUPPLY MODULE
|
Astec America, Inc
Emerson Network Power
|
| CIL928A |
0.700W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 100 - 320 hFE
|
Continental Device India Limited
|
| APT5010JVR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 699LP5E HMC699LP5 HMC699LP510 |
7 GHz INTEGER N SYNTHESIZER CONTINUOUS (N = 56 - 519), NON-CONTINUOUS (N = 16 - 54)
|
Hittite Microwave Corporation
|
| CD2383Y |
0.700W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 160 - 320 hFE
|
Continental Device India Limited
|
| PMD18D80 PMD19D PM019D80 |
300 WATT (50 AMP CONTINUOUS, 100 AMP PEAK
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SMART1200LCD-15 |
SmartPro LCD 120V 1.2kVA 700W Line-Interactive UPS, 2U Rack-Tower, LCD Display, USB, DB9 Serial
|
Tripp Lite. All Rights ...
|
| ICE3PCS03G |
Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM)
|
Infineon Technologies AG
|
