| PART |
Description |
Maker |
| SBA100-09J |
90V, 10A Rectifier(用于高频整流应用的重复反向电0V，平均整流电0A 整流
90V/ 10A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 10A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 36-00029-06-C1 36-00029-06 |
IND COMMON MODE 70uH 80A 实业80A条共0uH
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| SBA100-09Y |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 10A Rectifier
90V/ 10A Rectifier
|
SANYO[Sanyo Semicon Device]
|
| SBJ100-06J |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 10A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 10A Rectifier
|
Sanyo Semicon Device
|
| ENA2243 |
N-Channel Power MOSFET, 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain
|
ON Semiconductor
|
| X28HC16J-55 X28HC16SI-55 X28HC16J-90 X28HC16PI-70 |
90NS, 44 PLCC, IND TEMP(FLASH)
x8 EEPROM
120NS, TSOP, COM TEMP(FLASH)
150NS, 44 TSOP, IND TEMP(FLASH)
90NS, TSOP, IND TEMP(FLASH)
70NS, TSOP, IND TEMP, GREEN(FLASH) x8的EEPROM
|
Electronic Theatre Controls, Inc.
|
| PUMA2X0214I-9035 PUMA2X0214I-9045 PUMA2X0214I-9055 |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 静态存储器/存储
10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIAL EE) 静态存储器/存储
10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIAL EE) 静态存储器/存储
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Maxim Integrated Products, Inc.
|
| L08053R9CEWTR L08051R2CEWTR L08053R3CEWTR L08052R7 |
IND 3.9UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0039 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 1.2UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0012 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0033 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 2.7UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0027 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 6.8UH 0.5UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0068 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 2.7UH 0.5UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0027 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 15.0UH 5% THIN-FILM SMD-0603 TR-7 NI/SN-PB RF 1 ELEMENT, 0.015 uH, GENERAL PURPOSE INDUCTOR, SMD
IND 22.0UH 5% THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
INDUCTOR, 0805 CASE, 3.3NH; Inductor type:High Frequency / RF; Series:Accu-L; Inductance:3.3nH; Tolerance, inductance: /-15.15%; Resistance:0.11R; Current, DC max:1500mA; Frequency, resonant:10000MHz; Case style:0805; Q factor:38; RoHS Compliant: Yes
IND 15.0UH 5% THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
|
AVX, Corp.
AVX CORP
|
| AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090 |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
DIE SALE, 2.7V, 7 MIL(BIOS FLASH)
10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH)
8-SOIC,AUTO TEMP,2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE)
10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE)
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|
Stackpole Electronics, Inc.
Ecliptek, Corp.
Analog Devices, Inc.
Glenair, Inc.
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| PVZ2A203A01B00 PVZ2A303A01B00 PVZ2A204A01B00 PVZ2A |
16MHZ, PLCC, IND TEMP, GREEN(MCU AVR)
16MHZ, PDIP, IND TEMP, GREEN(MCU AVR)
16MHZ, MLF, IND TEMP(MCU AVR)
16MHZ, TQFP, IND TEMP, GREEN(MCU AVR)
|
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