| PART |
Description |
Maker |
| 2SK3530-01MR 2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification
Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 2SK3550-01R |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Power MOSFET SuperFAP-G series Target
|
Fuji Electric
|
| 2SK1503-01 |
Fuji power MOSFET Specification
|
Fuji Electric
|
| FA5591 FA5590 |
FUJI Power Supply Control IC
|
Fuji Electric
|
| FA3687V |
FUJI Power Supply Controllc
|
Fuji Electric
|
| 2SK3875-01 28F256L18 |
Power MOSFET / Super FAP-G Series
FUJI POWER MOSFET Super FAP-G Series
|
FUJI[Fuji Electric]
|
| 2SC4538R |
Ratigns and Caracteristics of Fuji Power Transistor
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| FA5695 |
Fuji Switching Power Supply Control IC
|
Fuji Electric
|
| 1MBH50D-060S |
Ratings and characteristics of Fuji IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 1MBH15-120 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| ERW12-120 |
Ratings and characteristics of Fuji silicon diode
|
FUJI[Fuji Electric]
|
