PART |
Description |
Maker |
2SC3053 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
2SC3351-T2B 2SC3351-T1B |
For amplify low noise and high frequency.
|
NEC
|
INA5002AP1 |
For low frequency power amplify Silicon PNP Epitaxial
|
Isahaya Electronics Corporation
|
INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
2SC3052 2SC305210 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SA2026 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
INC6007AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SC5815 2SC581510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE
|
Isahaya Electronics Corporation
|
2SC5383-10 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
|
2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation Panasonic Semiconductor
|
ISA1235AC1 ISA1602AM1 ISA1602AM113 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|