| PART |
Description |
Maker |
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| 2SD2469A 2SD2469 |
Silicon NPN epitaxial planar type(For power switching) 7 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| RN6006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC4989 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
