| PART |
Description |
Maker |
| ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 500mA的一（c）|
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 200mA的我（丙
|
Electronic Theatre Controls, Inc.
IDEC, Corp.
|
| 2SD2444K |
Power Transistor (15V, 1A)
|
Rohm
|
| ZXTP23015CFHTA ZXTP23015CFH |
15V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| HI1-5040-2 HI1-5040-5 HI1-5040-7 HI1-5040_883 HI3- |
15V/-15V Wide Analog Signal Range, High Current Capability 80mA (Typical)
|
Harris Corporation
|
| 2SD1468S09 2SD1468S |
Muting Transistor (15V, 1A)
|
Rohm
|
| ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA |
CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGPF20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A)
|
IRF[International Rectifier]
|
