| PART |
Description |
Maker |
| 2SD2061 2SD2061F |
TRANSISTOR | 60V V(BR)CEO | 3A I(C) | TO-220FP
Power Transistor(120V/ 7A)
Power Transistor(120V, 7A)
|
Rohm
|
| 2SB688 2SB688O 2SB688R |
POWER TRANSISTORS(8A/120V/80W)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR
POWER TRANSISTORS(8A,120V,80W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SD1889 2SB1340 |
Power Transistor (120V/ -6A)
Power Transistor (120V, -6A)
|
ROHM[Rohm]
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| ZXTP05120HFF ZXTP05120HFFTA |
120V, SOT23F, PNP medium power Darlington transistor
|
Diodes Incorporated
|
| FZT694B-16 |
120V NPN MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1038S 2SA1579 2SA1514K |
ER 3C 3#12 PIN PLUG
High-voltage Amplifier Transistor (−120V/ −50mA)
High-voltage Amplifier Transistor (-120V, -50mA)
High-voltage Amplifier Transistor (−120V −50mA)
High-voltage Amplifier Transistor (−120V, −50mA)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
| 2SC4102E 2SC4102R 2SC4102S 2SC3906KR 2SC3906KE 2SC |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-70 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|的SC - 70
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|律师- 59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-59
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SC-70
|
NEC, Corp.
Rohm Co., Ltd.
Infineon Technologies AG
|
