| PART |
Description |
Maker |
| 2MBI200-120-01 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
1200V / 200A 2 in one-package 1200 200安培在一2级封
IGBT module
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| CIL351 CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE.
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE.
NPN SILICON PLANAR TRANSISTORS
|
Continental Device India Limited
|
| PRHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| HA200-SU |
STROMWNALDER 200A
|
N/A
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2MBI200S-120 |
1200V / 200A 2 in one-package
|
List of Unclassifed Manufacturers
Fuji Electric
|
| 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
|
Fuji Electric
|
| 1N3174 |
Si Rectifier, 200A < I(O)/I(F) s 500A
|
New Jersey Semi-Conductor Products, Inc.
|
| 30PRA20 |
FRD - 3A 200A 90ns
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| PD2008 |
200A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| MBR20020CT MBR20030CT |
Silicon Schottky Diode, 200A
|
Naina Semiconductor ltd.
|
| MTP200 |
Three-Phase Bridge Rectifier, 200A
|
Nell Semiconductor Co., Ltd
|
