| PART |
Description |
Maker |
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| REF02HP REF01Z REF02Z REF01 REF02HSA REF01HSA REF0 |
DBL DEN JACKSCREW F172
5V 10V Precision Voltage References
5V, 10V Precision Voltage References
5V/ 10V Precision Voltage References
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| TPSD226K035R0400 TPSC226K016R0375 TPSE107K016R0100 |
KONDENSATOR TANTAL SMD 22UF 35V
KONDENSATOR TANTAL SMD22UF 16V
KONDENSATOR TANTAL SMD 100UF16V
KONDENSATOR TANTAL SMD 100UF 16V
KONDENSATOR TANTAL SMD 100UF 10V
KONDENSATOR TANTAL SMD 47UF 10V
KONDENSATOR钽贴70UF 10V
KONDENSATOR TANTAL SMD 68UF 16V
KONDENSATOR TANTAL SMD 330UF 6.3V
KONDENSATOR TANTAL SMD 100UF 6.3V
KONDENSATOR TANTAL SMD 470UF 10V
KONDENSATOR TANTAL SMD 33UF 10V
KONDENSATOR TANTAL SMD 33UF 35V
|
|
| KDB3652 |
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| TC7660 TC7660MOA TC7660MOA713 |
Charge Pump DC-to-DC Voltage Converter
The TC7660 is a pin-compatible replacement for the Industry standard TC7660 charge pump voltage converter. It converts a 1.5V to 10V input to a corresponding – 1.5V to -10V output using only two low-cost capacitors,eliminating indu
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http://
Microchip
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LTC1856NBSP LTC1854CG LTC1854CG-PBF LTC1854CG-TR L |
8-Channel, 【10V Input 12-/14-/16-Bit, 100ksps ADC Converters with Shutdown
8-Channel, ±10V Input 16-Bit, 100ksps ADC Converter with Shutdown
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Linear Technology Corporation
|
| GRM1887U1A223J |
Chip Monolithic Ceramic Capacitor 0603 U2J 0.022μF 10V
Chip Monolithic Ceramic Capacitor 0603 U2J 0.022レF 10V
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Murata Manufacturing Co., Ltd.
|
| GRM188R61A335K |
Chip Monolithic Ceramic Capacitor 0603 X5R 3.3μF 10V
Chip Monolithic Ceramic Capacitor 0603 X5R 3.3レF 10V
|
http://
Murata Manufacturing Co., Ltd.
|
| GRM185D71A105K |
Chip Monolithic Ceramic Capacitor 0603 X7T 1μF 10V
Chip Monolithic Ceramic Capacitor 0603 X7T 1レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM32ER71A226K |
Chip Monolithic Ceramic Capacitor 1210 X7R 22μF 10V
Chip Monolithic Ceramic Capacitor 1210 X7R 22レF 10V
|
Murata Manufacturing Co., Ltd.
|
