| PART |
Description |
Maker |
| MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSUS4400 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| SE5455 SE3455 |
GaAs Infrared Emitting Diode
|
Philips Semiconductors
Honeywell Solid State Electronics Center
|
| KELD001 |
Infrared Emitting Diode(GaAs)
|
KODENSHI KOREA CORP.
|
| SEP8506 |
GAAS INFRARED EMITTING DIODE
|
Honeywell Solid State Electronics Center
|
| 1N6265 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| TSUS520_07 TSUS520 TSUS5200 TSUS5201 TSUS5202 |
Infrared Emitting Diode, 950 nm, GaAs
|
VISAY[Vishay Siliconix]
|
| TSUS52007 TSUS520 TSUS5200 TSUS5201 TSUS5202 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| LN69 |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
