PART |
Description |
Maker |
TC581282A TC581282AXB |
128-MBIT (16M 8 BITS) CMOS NAND E2PROM 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY 16 MBIT CMOS FLASH MEMORY 16兆比特的CMOS闪存
|
Toshiba Corporation Toshiba, Corp.
|
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
TC58FVT641 TC58FVT641XB-10 TC58FVT641XB-70 TC58FVB |
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation Toshiba Semiconductor
|
LY62L102616ALL-55SL |
16M Bits ( 2Mx8 / 1Mx16 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
EDS2516ADTA-75-E EDS2516ADTA-75 |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|