| PART |
Description |
Maker |
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR331E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR331 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| U1FWJ44N |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA
|
| U1GWJ49 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| RKD703KK RKD703KKR |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| RKD703KJR RKD703KJP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB226S |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| 3FWJ42N |
SCHOTTKY BARRIER DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RKD703KL RKD703KLR |
Silicon Schottky Barrier Diode for high Speed Switching
|
Renesas Electronics Corporation
|
| HSL226_07 HSL226 HSL226-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
