| PART |
Description |
Maker |
| GS8644Z18 GS8644Z18E-200I GS8644Z18E-225 GS8644Z18 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC[ETC]
GSI Technology
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8640V36T-200 GS8640V36T-300 GS8640V36T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
| K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS8644V18B-166 GS8644V18B-250 GS8644V18B-250I GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8640V18T-250 GS8640V18T-300I GS8640V18T-167 GS86 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 5.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
