| PART |
Description |
Maker |
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| FRM5J142GW |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| FU-311SPP-CV4 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷放电前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| G9128 G9128-21 G9128-22 G9128-23 G9128-24 G9131-21 |
InGaAs PIN photodiode with preamp
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| PIN-1310-2I-LCA |
3.7GBS 1310NM PIN PREAMP ROSA
|
Finisar Corporation.
|
| PT10GC-J57 PT10GC PT10GC-J |
10Gb/s Coplanar PIN Preamp Receiver
|
Bookham, Inc.
|
