| PART |
Description |
Maker |
| APT20GT60CR |
Thunderbolt IGBT 600V 25A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| APT30GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 40A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT12GT60BR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs
Thunderbolt IGBT 600V 25A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
|
ADPOW[Advanced Power Technology]
|
| APT50GT60BRDQ1 APT50GT60BRDQ1G |
Thunderbolt IGBT
|
Advanced Power Technology
|
| APT100GT120JRDQ4 |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT100GT60B2R APT100GT60B2RG APT100GT60LRG |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT20GS60KR APT20GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
