| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT15GP60B APT15GP60S |
POWER MOS 7 IGBT
|
Microsemi Corporation
|
| APT30GP60JDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT25GP90BDQ1G APT25GP90BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
| APT50GP60J |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
| APT65GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT32GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT25GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
