| PART |
Description |
Maker |
| CLR5101 |
40 V, silicon NPN planar expitaxial darlington phototransistor
|
Clairex Technologies
|
| CLR4185 CLR4180 |
40 V, silicon NPN planar expitaxial darlington phototransistor
|
Clairex Technologies
|
| HN8550 HN8550C HN8550D |
25 V, PNP silicon expitaxial planar transistor
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications
|
Honey Technology
SEMTECH[Semtech Corporation]
|
| 2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications
|
http://
Semtech Corporation
|
| 2N5401 2N5400 HN5401 HN5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications
|
SEMTECH[Semtech Corporation]
|
| TIP41C |
NPN EXPITAXIAL PLANAR TRANSISTOR
|
Unisonic Technologies
|
| RB521S-40 |
SILICON EXPITAXIAL SCHOTTKY BARRIER DIODES
|
Rectron Semiconductor
|
| MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM |
PNP EXPITAXIAL PLANAR TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode
Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| IRG4BC20SD-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| UL1970N UL1970 |
Ukad sterujcy punktowym wskanikiem zoonym z diod wieccych
OBUDOWA CE 71
|
Ultra CEMI
ETC
|
