| PART |
Description |
Maker |
| SPP80N08S2L-07 SPB80N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2L-03 SPP100N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N04S2-04 SPP100N04S2-04 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; NL;3.6mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
