PART |
Description |
Maker |
1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Ultra High Speed Switching Application
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TY Semiconductor Co., Ltd TY Semicondutor
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AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125 4-Bit Magnitude Comparator 16-CDIP -55 to 125 High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
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Advanced Micro Devices, Inc.
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BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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74VCXH32245LBR 74VCXH32245 74VCXH32245LB |
LOW VOLTAGE CMOS 32-BIT BUS TRANSCEIVER(3-STATE) WITH 3.6V TOLERANT INPUT AND OUTPUT LOW VOLTAGE CMOS 32-BIT BUS TRANSCEIVER (3-STATE) WITH 3.6V TOLERANTAT INPUTS AND OUTPUTS 低电压CMOS 32位总线收发器(3 - TOLERANTAT国家.6V的输入和输出
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
E0C6S37 |
Advanced Single-Chip CMOS、Super Low Voltage 4-Bit Microcomputer Consisting of the E0C6200A 4-Bit CMOS Core CPU,SVD Circuit/Comparator,High Quality Display LCD Driver(4位高级的、CMOS、单片微型计算机(含4位E0C62000A中央处理器核SVD电路/比较高质量的LCD驱动器))
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爱普生(中国)有限公
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K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Surface Mount Resistors Thick Film Chip Resistors 256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
TMP87C409BN TMP87C409BM 87C809 TMP87C809BN TMP87C8 |
(TMP87Cx09xx) CMOS 8-bit Microcontroller Low Voltage, Low Power, 16-/24-Bit, Dual Sigma Delta ADC; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: TBD
|
Toshiba Semiconductor Toshiba Corporation
|
2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
2SC3011 |
High Gain :|S21e|2=12dB(TYP.) Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
|
TY Semiconductor Co., Ltd
|
BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
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Brilliance Semiconducto... BSI[Brilliance Semiconductor]
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