PART |
Description |
Maker |
MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
UPA650TT UPA650TT-E1 UPA650TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA652TT UPA652TT-E1 UPA652TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA621TT UPA621TT-E1 UPA621TT-E2 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1874B UPA1874BGR-9JG UPA1874BGR-9JG-E1 UPA1874B |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
2SK2360 2SK2359 TC-2501 2SK2359-Z |
N-channel enhancement type DMOS From old datasheet system MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK36907 2SK369 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
MGF1304A |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|