| PART |
Description |
Maker |
| PMWD19UN PMWD19UN-01 |
DUAL uTRENCHMOS ULTRA LOW LEVEL FET
Dual uTrenchMOS (tm) ultra low level FET 双uTrenchMOSTM）超低水平场效应
From old datasheet system
Dual uTrenchMOS(TM) ultra low level FET
|
NXP Semiconductors
HIROSE ELECTRIC Co., Ltd.
PHILIPS[Philips Semiconductors]
|
| PMN23UN |
UTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMWD26UN |
Dual N-channel uTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD280UN |
Dual N-channel mTrenchMOS ultra low level FET
Dual N-channel uTrenchmos (tm) ultra low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IPB049N08N5 |
N-channel, normal leve
|
Infineon Technologies A...
|
| PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NCV8752BSN33T1G NCV8752BSN18T1G NCV8752BSN28T1G |
200 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, Low Dropout Regulator
|
ON Semiconductor
|
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| PMF780SN |
N-channel uTrenchmos (tm) standard level FET
N-channel uTrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
|
