PART |
Description |
Maker |
FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
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FAIRCHILD[Fairchild Semiconductor]
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IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
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IRF[International Rectifier]
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IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
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IRF[International Rectifier]
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IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
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International Rectifier
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FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
|
Fairchild Semiconductor
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IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
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IRF[International Rectifier]
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HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
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IRHF8130 IRHF3130 IRHF4130 IRHF7130 JANSF2N7261 JA |
30V N-Channel PowerTrench MOSFET RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A) THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
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IRHQ567110 IRHQ567110P IRHQ563110 IRHQ563110N IRHQ |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package 100V的双n -2P -通道MOSFET的采8引脚LCC封装 RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) RADIATION HARDENED POWER MOSFET 100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
|
HIROSE ELECTRIC Co., Ltd. IRF[International Rectifier]
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JANTXV2N7335 JANTX2N7335 IRFG9110 IRFG9110P IRFG91 |
Simple Drive Requirements POWER MOSFET THRU-HOLE (MO-036AB) 100V Quad P-Channel MOSFET in a MO-036AB package -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
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IRF[International Rectifier]
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