| PART |
Description |
Maker |
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 54A条（丁）|52AA
SMPS MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| ITF87072DK8T FN4812 |
6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω双组 P沟道2.5V专用功率MOS场效应管)
From old datasheet system
6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
|
Intersil Corporation
|
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY
20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| IRF3706 IRF3706L IRF3706S IRF3706STRL IRF3706STRR |
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| STV160NF02L_04 STV160NF02L04 STV160NF02LT4 |
N-CHANNEL 20V - 0.0016 OHM - 160A POWERSO-10 STRIPFET MOSFET
N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
| NDH8304 NDH8304P |
Dual P-Channel Enhancement Mode Field Effect Transistor2.7A20V0.07Ω双P沟道增强型场效应管（漏电2.7A, 漏源电压-20V，导通电0.07Ω 2700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STS2DPFS20V 2DPFS20V |
P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFETII MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET⑩ II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET II MOSFET PLUS SCHOTTKY DIODE
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
