PART |
Description |
Maker |
PMB2331 |
The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer
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SIEMENS AG
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF Linear power transistor(UHF 线性功率晶体管)
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS UHF BAND, Si, NPN, RF POWER TRANSISTOR
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Advanced Power Technolo... Advanced Power Technology
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KTC813U |
EPITAXIAL PLANAR NPN TRANSISTOR (TV TUNER/ UHF OSCILLATOR/ TVTUNER UHF CONVERTER)
|
KEC(Korea Electronics)
|
BLT50_CNV_2 BLT50 BLT50-T |
UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF power transistor From old datasheet system
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NXP Semiconductors N.V.
|
BLW33 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF linear power transistor
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Philips Semiconductors NXP Semiconductors
|
Q62702-F1582 BF569W Q62702-F1322 |
From old datasheet system PNP Silicon RF Transistor (For oscillators mixer and self-oscillating mixer stages in UHF TV-tuner) PNP Silicon RF Transistor kein Status PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPN硅射频晶体管(低失真输出天线的宽带和电信放大级)
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
SI9731 |
渭P Controlled Li-ion Battery Charger
Pulse Charges 1 to 3 Cells
Integrated MOSFETs UP Controlled Battery Charger For 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries μP Controlled Battery Charger For 1-Cell Li-ion or 1-Cell to 3-Cell NiCd/NiMH Batteries(用于1节锂电池-3节镍镍镉电池的μP控制的电池充电器)
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Vishay Siliconix Vishay Intertechnology,Inc.
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
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