| PART |
Description |
Maker |
| TGA2923-SG |
10 Watt MMDS Packaged Amplifier
|
TriQuint Semiconductor,Inc.
|
| TGF2961-SD |
1 Watt DC-4 GHz Packaged HFET
|
TriQuint Semiconductor
|
| TGA2921-SG |
4 Watt 802.11a Packaged Amplifier
|
TriQuint Semiconductor
|
| CMD227 |
MMDS Duplexer
|
API Technologies Corp
|
| CXD1958Q |
MMDS TCM/QAM Demodulator FEC ADC
|
SONY
|
| NTE1854M NTE1854D |
3/4 Pin 500mA Adjustable Positive Voltage Regulator 3-PFM 0 to 125
Integrated Circuit Dual Power Operational Amplifie
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| TGA8658-EPU-SG |
Packaged Ku-band HPA
Ku Band 2W Packaged Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| AM2968ALC AM2968ALCB AM2968DC AM2968A/BUA AM2968A/ |
Single High Side Driver, Inverting Inputs, Current Sensing, Overcurent Detection and Shutdown Fault Output in a 8-pin DIP package; A IR2128 packaged in a Lead-Free 8-Lead PDIP
Linear Current Sensing IC in a 8-Lead DIP package; A IR2175 packaged in a 8-Lead SOIC
High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels packaged in a 8-Pin SOIC; A IRS2607DSPBF shipped on Tape and Reel
High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels packaged in a 8-Pin SOIC; A IRS2607DSPBF with Standard Packaging
Linear Current Sensing IC in a 8-Lead DIP package; A IR2175 packaged in a 8-Lead PDIP
High and Low Side Driver, SoftTurn-On, Noninverting Inputs in a 8-pin DIP package; A IR2106 packaged in a 8-Lead SOIC
Half Bridge Driver, Soft Turn-On, Single Input Plus Shut-Down, All high Voltage Pins on One Side, Programmable 0.5-5us Deadtime in a 14-pin DIP
DRAMController
|
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| 13522-100 13522-102 13522-1R0 13522-R005 13522-R00 |
PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 1/2 WATT TO 50 WATT
|
RCD COMPONENTS INC.
|
