| PART |
Description |
Maker |
| MT5C6805EC-35/883C MT5C6805C-35L/883C MT5C6805C-35 |
16K x 4 SRAM SRAM MEMORY ARRAY 16K的4 SRAM的存储器阵列
|
Electronic Theatre Controls, Inc.
|
| AS8F512K32Q-90/CT AS8F512K32Q-90/IT AS8F512K32Q-90 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
|
Austin Semiconductor, Inc
|
| DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND |
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16k Nonvolatile SRAM 16K的非易失SRAM
M39012 MIL RF CONNECTOR 16K的非易失SRAM
|
Maxim Integrated Products, Inc.
HIROSE ELECTRIC Co., Ltd.
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| AS8S512K32_03 AS8S512K32 AS8S512K32A AS8S512K32AQ1 |
512K x 32 SRAM SRAM MEMORY ARRAY
|
AUSTIN[Austin Semiconductor]
|
| MT5C1001C-35L_883C MT5C1001C-35L_IT MT5C1001C-35L_ |
1M x 1 SRAM SRAM MEMORY ARRAY
|
Austin Semiconductor
http://
|
| AS8S512K32P-17L/Q AS8S512K32P-17L/XT AS8S512K32P-1 |
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
|
Austin Semiconductor, Inc
|
| AS8S512K32AP-45/IT AS8S512K32Q-45LIT AS8S512K32P-4 |
512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66
512K x 32 SRAM memory array
|
AUSTIN SEMICONDUCTOR INC
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MT5C1005 |
SRAM MEMORY ARRAY
|
ASI
|
