| PART |
Description |
Maker |
| CHF12545CBF500L CHF12545CBF500R CHF12545CBF |
500 W Power RF Flanged Chip Termination
|
BOURNS[Bourns Electronic Solutions]
|
| HFR-RFT100110-C50OHMFZ00 HFR-RFT250110-C50OHMFZ00 |
High Power Flanged RF Terminators
|
IRC - a TT electronics Company.
|
| BLM21A102SPT BLM11A601SPB BLM31A700SPT BLM41A800SP |
END EMI CHIP BLM21A102SPT 0805 TEMPLATE 1 FUNCTIONS, 0.2 A, FERRITE CHIP
FLTR,EMI,,,,200MA,,,,,SM,0603 1 FUNCTIONS, 0.2 A, FERRITE CHIP
COIL, BEAD FERRITE 070 OHMS @ 100MHZ B SM, 1206 1 FUNCTIONS, 0.2 A, FERRITE CHIP
FERRITE BEAD,CHIP,TYPE 1806, 500 MA 1 FUNCTIONS, 0.5 A, FERRITE CHIP
1 FUNCTIONS, 0.05 A, FERRITE CHIP
|
Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
|
| ZAPD-21 ZAPD-21-N |
500 MHz - 2000 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS ROHS COMPLIANT, CASE F14
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 500 to 2000 MHz
|
Mini-Circuits
|
| CDR13BP0R3EBNP CDR13BP0R2EBNP CDR13BP0R1EBNP |
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000003 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000002 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000001 uF, SURFACE MOUNT CHIP
|
AVX, Corp.
|
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| APL502B2 APL502L APL502LG |
LINEAR MOSFET
Power MOSFET; Package: TO-264 [L]; ID (A): 58; RDS(on) (Ohms): 0.09; BVDSS (V): 500; 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
Microsemi, Corp.
|
| IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
2MM TERMINAL STRIPS
HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| 1N5985B ON0014 1N6003B 1N5993B 1N5992B 1N5987B 1N5 |
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.6V齐纳电压，齐纳稳压二极管) 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,6.8V齐纳电压，齐纳稳压二极管) 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,12V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,15V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,18V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,10V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,2.4V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.7V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.1V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,13V齐纳电压，齐纳稳压二极管)
From old datasheet system
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35?荤?灏??,6.2V榻?撼?靛?锛??绾崇ǔ??????)
|
MOTOROLA INC
ON Semiconductor
|
|
