PART |
Description |
Maker |
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
CFK2062-P3 CFK2062-P3-000T |
1.8 to 2.0 GHz 30 dBm Power GaAs FET 1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
SIEMENS AG Mimix Broadband, Inc.
|
NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
CF739 Q62702-F1215 |
From old datasheet system GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G... Siemens Semiconductor Group Infineon SIEMENS AG
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|