PART |
Description |
Maker |
DN100 |
Extremely low collector-to-emitter saturation voltage Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
DN500 |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET N-channel mTrenchMOS extremely low level FET
|
http:// PHILIPS[Philips Semiconductors]
|
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|