PART |
Description |
Maker |
CDG4500 |
4-CHANNEL CMOS/DMOS HIGH-FREQUENCY MULTIPLEXER 4 Channel CMOS / DMOS High Frequency Multiplexer
|
http:// TelCom Semiconductor
|
MPD8020 |
CMOS/DMOS Semicustom High-Voltage Array Summary Information*.Not Recommended for New Designs
|
Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
|
VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω,N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS(击穿电40伏,10Ω沟道增强型垂直的DMOS结构场效应管 N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??) N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp. ELAN Microelctronics Corp .
|
SSTSD201 SSTSD203 SD200DC SD200 XSD203 SD201DC SD2 |
(SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
|
http:// Calogic LLC CALOGIC[Calogic, LLC]
|
ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4392 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP9235 |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|