PART |
Description |
Maker |
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
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Microchip Technology Inc.
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AM7200-35RC AM7200-35JC AM7200-35PC AM7200-50JC AM |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 25 ns, PDIP28 HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 50 ns, PDIP28 Circular Connector; No. of Contacts:13; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No JT 13C 13#22D PIN WALL RECP
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
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M27V256 M27V256-100B1TR M27V256-100B6TR M27V256-10 |
NND - 256 KBIT (32KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-SSOP -40 to 85 2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 2.5-V/3.3-V 18-Bit Universal Bus Transceiver With 3-State Outputs 56-SSOP -40 to 85 2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-TSSOP -40 to 85 256千位2KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
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SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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ST14C02C |
Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM
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ST Microelectronics
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AM42DL3244GB55IT AM42DL32X4G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
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Advanced Micro Devices
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ST14C02 ST14C02C ST14C02C-D15 ST14C02C-D20 ST14C02 |
Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM 记忆卡IC 2千位256 × 8串行I2C总线的EEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
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LH28F400BG-TL85 LH28F400BG-L85 LH28F400BG LH28F400 |
4M-BIT (256 x 16) SmartVoltage Flash Memory 4M-BIT (256KB x16) SmartVoltage Flash MEMORY 4M-BIT(256KBx16) SmartVoltage Flash MEMORY 4M-BIT (256K x 16)Smart Voltage Flash Memory
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SHARP[Sharp Electrionic Components]
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P87C576EHPN |
80C51 8-bit microcontroller family 8K/256 OTP/ROM, 6 channel 10-bit A/D, 4 comparators, failure detect circuitry, watchdog timer
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Philips
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AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op. Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes Am29LV400B KGD (Known Good Die Supplement) INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位).0伏的CMOS只引导扇区闪 CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
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http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. Electronic Theatre Controls, Inc.
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AM29LV002B-150FCB AM29LV002B-90RFCB AM29LV002B-150 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区闪存 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区闪存
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Advanced Micro Devices, Inc.
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AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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AMD[Advanced Micro Devices]
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