| PART |
Description |
Maker |
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BUZ110SL Q67040-S4004-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUZ102SL Q67040-S4010-A2 |
SIPMOS ? Power Transistor
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 47 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| BUZ102AL C67078-S1356-A2 BUZ102ALE3045A |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| RFP8P06LE RFD8P06LESM RFD8P06LE FN4273 |
8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET
From old datasheet system
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，额定静电释放P沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 |
INDUCTOR 100UH 1200MA
Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
|
EPCOS[EPCOS]
|
| 951CXP825K-SF-F |
AC Rated, Round Axial Leaded, UL 810 Fail Safe, Rated 10,000 AFCLMax.
|
Cornell Dubilier Electr...
|
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